Abstract: The SiC/SiO 2 interface state is one of the main factors that limit the performance and reliability of the SiC metal–oxide–semiconductor field-effect transistor (MOSFET). In this article, we ...
Abstract: In this letter, we report for the first time the degradation mechanism of drain current in tunneling field-effect transistors (TFETs). Using positive-bias and hot-carrier (HC) stress ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback