Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...

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Swansea University and Space Forge, pioneer in space-based materials manufacturing, have signed a major deal, making the ...

Rohm, a maker of SiC, GaN and silicon power devices, has added its name to companies supporting NVIDIA’s new 800V High Voltage Direct Current (HVDC) architecture, designed for megawatt-scale AI ...

The EPC9196 has been validated in real-world conditions, powering a 3-kW servo motor at 150 VDC and 60 kHz switching ...

Researchers from Kyoto Institute of Technology are claiming to have broken new ground by demonstrating the first vertical ...

GaN-on-SiC epitaxial wafer company SweGaN has appointed Pontus de Laval, senior advisor at one of SweGaN’s major shareholders ...

Now researchers at Imec and Ghent University have demonstrated a fully-integrated single-chip microwave photonics system, ...

Working with the company III/V-Reclaim, scientists at the Fraunhofer Institute for Solar Energy Systems ISE have succeeded in ...

After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

Recent patent filings emphasise critical aspects of power GaN technology such as gate design and packaging, resulting in ...

“Indium oxide contains oxygen-vacancy defects, which facilitate carrier scattering and thus lower device stability,” says ...